Справочник MOSFET. SRT045N012HS2

 

SRT045N012HS2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SRT045N012HS2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 131 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 188 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 73 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 2000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: TO263

 Аналог (замена) для SRT045N012HS2

 

 

SRT045N012HS2 Datasheet (PDF)

 2.1. Size:1675K  sanrise-tech
 srt045n012hs.pdf

SRT045N012HS2 SRT045N012HS2

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

 3.1. Size:1222K  sanrise-tech
 srt045n012h.pdf

SRT045N012HS2 SRT045N012HS2

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.1. Size:1387K  sanrise-tech
 srt045n025h.pdf

SRT045N012HS2 SRT045N012HS2

Datasheet 2.5m, 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.2. Size:1277K  sanrise-tech
 srt045n060h.pdf

SRT045N012HS2 SRT045N012HS2

Datasheet 6.0m, 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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