Справочник MOSFET. SRT045N012HS2

 

SRT045N012HS2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SRT045N012HS2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 131 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 188 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 2000 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для SRT045N012HS2

   - подбор ⓘ MOSFET транзистора по параметрам

 

SRT045N012HS2 Datasheet (PDF)

 2.1. Size:1675K  sanrise-tech
 srt045n012hs.pdf pdf_icon

SRT045N012HS2

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

 3.1. Size:1222K  sanrise-tech
 srt045n012h.pdf pdf_icon

SRT045N012HS2

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.1. Size:1387K  sanrise-tech
 srt045n025h.pdf pdf_icon

SRT045N012HS2

Datasheet 2.5m, 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.2. Size:1277K  sanrise-tech
 srt045n060h.pdf pdf_icon

SRT045N012HS2

Datasheet 6.0m, 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

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Другие MOSFET... SRT03N010LD56TR-GS , SRT03N011L , SRT03N016L , SRT03N020L , SRT03N023H , SRT03N023L , SRT03N050LD56TR-G , SRT045N012H , K4145 , SRT045N012HTC-GS , SRT045N025H , SRT045N060H , SRT04N012L , SRT04N016IL , SRT04N016L , SRT04N016LS2TR-GS , SRT04N016LTC-GS .

History: ISCNH339D | NTR2101PT1G | IRFZ48V | STI33N65M2 | NCEP060N10F | CS6N80A0H | IRLR7811WPBF

 

 
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