SRT045N025H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRT045N025H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 129 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 762 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: PDFN5X6 TO220

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SRT045N025H Datasheet (PDF)

..1. Size:1387K sanrise-tech
srt045n025h.pdf

Datasheet 2.5m, 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

6.1. Size:1675K sanrise-tech
srt045n012hs.pdf

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

6.2. Size:1222K sanrise-tech
srt045n012h.pdf

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

6.3. Size:1277K sanrise-tech
srt045n060h.pdf

Datasheet 6.0m, 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

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