SRT045N025H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRT045N025H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 78 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 129 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 762 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
Тип корпуса: PDFN5X6 TO220
Аналог (замена) для SRT045N025H
SRT045N025H Datasheet (PDF)
srt045n025h.pdf

Datasheet 2.5m, 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio
srt045n012hs.pdf

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super
srt045n012h.pdf

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio
srt045n060h.pdf

Datasheet 6.0m, 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio
Другие MOSFET... SRT03N016L , SRT03N020L , SRT03N023H , SRT03N023L , SRT03N050LD56TR-G , SRT045N012H , SRT045N012HS2 , SRT045N012HTC-GS , IRF4905 , SRT045N060H , SRT04N012L , SRT04N016IL , SRT04N016L , SRT04N016LS2TR-GS , SRT04N016LTC-GS , SRT04N016LDTR-GS , SRT04N024L .
History: KIA3401 | IRFB5620PBF | AMA410N | KIA2808A-220 | SE10015 | SWF10N65 | SI7216DN
History: KIA3401 | IRFB5620PBF | AMA410N | KIA2808A-220 | SE10015 | SWF10N65 | SI7216DN



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