All MOSFET. SRT045N025H Datasheet

 

SRT045N025H Datasheet and Replacement


   Type Designator: SRT045N025H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 129 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 762 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PDFN5X6 TO220
 

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SRT045N025H Datasheet (PDF)

 ..1. Size:1387K  sanrise-tech
 srt045n025h.pdf pdf_icon

SRT045N025H

Datasheet 2.5m, 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.1. Size:1675K  sanrise-tech
 srt045n012hs.pdf pdf_icon

SRT045N025H

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

 6.2. Size:1222K  sanrise-tech
 srt045n012h.pdf pdf_icon

SRT045N025H

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.3. Size:1277K  sanrise-tech
 srt045n060h.pdf pdf_icon

SRT045N025H

Datasheet 6.0m, 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

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Datasheet: SRT03N016L , SRT03N020L , SRT03N023H , SRT03N023L , SRT03N050LD56TR-G , SRT045N012H , SRT045N012HS2 , SRT045N012HTC-GS , IRF4905 , SRT045N060H , SRT04N012L , SRT04N016IL , SRT04N016L , SRT04N016LS2TR-GS , SRT04N016LTC-GS , SRT04N016LDTR-GS , SRT04N024L .

Keywords - SRT045N025H MOSFET datasheet

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