SRT08N025HD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRT08N025HD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de MOSFET SRT08N025HD
SRT08N025HD Datasheet (PDF)
srt08n025hc56tr-g.pdf
Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S
srt08n025h.pdf
Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
srt08n055h.pdf
Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio
srt08n015htltr-g.pdf
Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918