SRT08N025HD - параметры транзистора MOSFET, его аналоги, datasheet

SRT08N025HD Datasheet (PDF)

4.1. Size:789K sanrise-tech
srt08n025hc56tr-g.pdf pdf_icon

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

4.2. Size:1104K sanrise-tech
srt08n025h.pdf pdf_icon

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

7.1. Size:1338K sanrise-tech
srt08n055h.pdf pdf_icon

Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

7.2. Size:894K sanrise-tech
srt08n015htltr-g.pdf pdf_icon

Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and

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