All MOSFET. SRT08N025HD Datasheet

 

SRT08N025HD Datasheet and Replacement


   Type Designator: SRT08N025HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PDFN5X6
 

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SRT08N025HD Datasheet (PDF)

 4.1. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N025HD

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 4.2. Size:1104K  sanrise-tech
 srt08n025h.pdf pdf_icon

SRT08N025HD

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 7.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N025HD

Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

 7.2. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N025HD

Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and

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Datasheet: SRT06N022HT , SRT06N027HD , SRT06N027HT , SRT06N095LD56G , SRT06N095LMG , SRT06N095LDG , SRT06N095LD33G , SRT08N015HTLTR-G , IRFZ24N , SRT08N025HT , SRT08N025HS , SRT08N025HC56TR-G , SRT08N055H , SRT08N100LM , SRT08N100LT , SRT08N100LD , SRT10N022HTLTR-G .

History: STI100N10F7 | WMS140NV6LG4 | IRFB4137 | NCEP090N10AGU | WMS04N10TS | SSBG65R075SFD2 | NCEP1214AS

Keywords - SRT08N025HD MOSFET datasheet

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