HCS80R380S Todos los transistores

 

HCS80R380S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCS80R380S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220F
 

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HCS80R380S Datasheet (PDF)

 ..1. Size:289K  1
 hcs80r380s.pdf pdf_icon

HCS80R380S

Dec 2019HCS80R380S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 13 A Excellent stability and uniformityRDS(on), max 0.38 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Swi

 8.1. Size:397K  semihow
 hcs80r1k2s.pdf pdf_icon

HCS80R380S

Sep 2020HCS80R1K2S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R380S

Sep 2020HCS80R1K2ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:399K  semihow
 hcs80r1k4st.pdf pdf_icon

HCS80R380S

Sep 2020HCS80R1K4ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

MOSTRAR MÁS

Otros transistores... SVT077R5ND , SVT077R5NS , WML38N60C2 , WMK38N60C2 , WMN38N60C2 , WMM38N60C2 , WMJ38N60C2 , AONR32340C , 2N7000 , HY3007P , HY3007M , HY3007B , HY3007PS , HY3007PM , NCE80H11 , S80N10R , S80N10S .

History: STF5N95K3 | AP2910EC4 | HM12N65F | TK8A10K3 | RU80190R

 

 
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