HCS80R380S Todos los transistores

 

HCS80R380S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCS80R380S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 26 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO220F

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HCS80R380S datasheet

 ..1. Size:289K  1
 hcs80r380s.pdf pdf_icon

HCS80R380S

Dec 2019 HCS80R380S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 13 A Excellent stability and uniformity RDS(on), max 0.38 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-220FS SYMBOL Swi

 8.1. Size:397K  semihow
 hcs80r1k2s.pdf pdf_icon

HCS80R380S

Sep 2020 HCS80R1K2S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FS SYMBOL S

 8.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R380S

Sep 2020 HCS80R1K2ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FT SYMBOL

 8.3. Size:399K  semihow
 hcs80r1k4st.pdf pdf_icon

HCS80R380S

Sep 2020 HCS80R1K4ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FT SYMBOL S

MOSTRAR MÁS

Otros transistores... SVT077R5ND , SVT077R5NS , WML38N60C2 , WMK38N60C2 , WMN38N60C2 , WMM38N60C2 , WMJ38N60C2 , AONR32340C , IRF4905 , HY3007P , HY3007M , HY3007B , HY3007PS , HY3007PM , NCE80H11 , S80N10R , S80N10S .

History: SVT077R5NS | 4AK17

 

 

 

 

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