HCS80R380S PDF and Equivalents Search

 

HCS80R380S Specs and Replacement

Type Designator: HCS80R380S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO220F

HCS80R380S substitution

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HCS80R380S datasheet

 ..1. Size:289K  1
 hcs80r380s.pdf pdf_icon

HCS80R380S

Dec 2019 HCS80R380S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 13 A Excellent stability and uniformity RDS(on), max 0.38 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-220FS SYMBOL Swi... See More ⇒

 8.1. Size:397K  semihow
 hcs80r1k2s.pdf pdf_icon

HCS80R380S

Sep 2020 HCS80R1K2S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FS SYMBOL S... See More ⇒

 8.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R380S

Sep 2020 HCS80R1K2ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FT SYMBOL ... See More ⇒

 8.3. Size:399K  semihow
 hcs80r1k4st.pdf pdf_icon

HCS80R380S

Sep 2020 HCS80R1K4ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FT SYMBOL S... See More ⇒

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Detailed specifications: SVT077R5ND, SVT077R5NS, WML38N60C2, WMK38N60C2, WMN38N60C2, WMM38N60C2, WMJ38N60C2, AONR32340C, IRF4905, HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, NCE80H11, S80N10R, S80N10S

Keywords - HCS80R380S MOSFET specs

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