All MOSFET. HCS80R380S Datasheet

 

HCS80R380S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCS80R380S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F

 HCS80R380S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCS80R380S Datasheet (PDF)

 ..1. Size:289K  1
 hcs80r380s.pdf

HCS80R380S HCS80R380S

Dec 2019HCS80R380S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 13 A Excellent stability and uniformityRDS(on), max 0.38 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Swi

 8.1. Size:397K  semihow
 hcs80r1k2s.pdf

HCS80R380S HCS80R380S

Sep 2020HCS80R1K2S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:399K  semihow
 hcs80r1k2st.pdf

HCS80R380S HCS80R380S

Sep 2020HCS80R1K2ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:399K  semihow
 hcs80r1k4st.pdf

HCS80R380S HCS80R380S

Sep 2020HCS80R1K4ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 8.4. Size:398K  semihow
 hcs80r1k4s.pdf

HCS80R380S HCS80R380S

Sep 2020HCS80R1K4S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Sw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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