All MOSFET. HCS80R380S Datasheet

 

HCS80R380S Datasheet and Replacement


   Type Designator: HCS80R380S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F
 

 HCS80R380S substitution

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HCS80R380S Datasheet (PDF)

 ..1. Size:289K  1
 hcs80r380s.pdf pdf_icon

HCS80R380S

Dec 2019HCS80R380S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 13 A Excellent stability and uniformityRDS(on), max 0.38 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Swi

 8.1. Size:397K  semihow
 hcs80r1k2s.pdf pdf_icon

HCS80R380S

Sep 2020HCS80R1K2S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R380S

Sep 2020HCS80R1K2ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:399K  semihow
 hcs80r1k4st.pdf pdf_icon

HCS80R380S

Sep 2020HCS80R1K4ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

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Datasheet: SVT077R5ND , SVT077R5NS , WML38N60C2 , WMK38N60C2 , WMN38N60C2 , WMM38N60C2 , WMJ38N60C2 , AONR32340C , IRF4905 , HY3007P , HY3007M , HY3007B , HY3007PS , HY3007PM , NCE80H11 , S80N10R , S80N10S .

History: NCEA75H25 | MCAC40N10YA-TP

Keywords - HCS80R380S MOSFET datasheet

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 HCS80R380S equivalent finder
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