NCE80H11 Todos los transistores

 

NCE80H11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE80H11
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de NCE80H11 MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE80H11 Datasheet (PDF)

 ..1. Size:361K  1
 nce80h11.pdf pdf_icon

NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.1. Size:413K  ncepower
 nce80h15.pdf pdf_icon

NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

 7.2. Size:337K  ncepower
 nce80h12.pdf pdf_icon

NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.3. Size:351K  ncepower
 nce80h16.pdf pdf_icon

NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H16NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)

MOSTRAR MÁS

Otros transistores... WMJ38N60C2 , AONR32340C , HCS80R380S , HY3007P , HY3007M , HY3007B , HY3007PS , HY3007PM , IRF9540N , S80N10R , S80N10S , CMD5941 , CMU5941 , MMBF4860 , N6006NZ , STP180N4F6 , TK10P50W .

History: NTHD4N02FT1 | 2SK3645-01MR

 

 
Back to Top

 


 
.