NCE80H11 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE80H11

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 105 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 880 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

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NCE80H11 datasheet

 ..1. Size:361K  1
 nce80h11.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H11 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.1. Size:413K  ncepower
 nce80h15.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

 7.2. Size:337K  ncepower
 nce80h12.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.3. Size:351K  ncepower
 nce80h16.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H16 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)

MOSTRAR MÁS

Otros transistores... WMJ38N60C2, AONR32340C, HCS80R380S, HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, SPP20N60C3, S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W