All MOSFET. NCE80H11 Datasheet

 

NCE80H11 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE80H11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 220 W
   Maximum Drain-Source Voltage |Vds|: 80 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 105 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 150 nC
   Rise Time (tr): 150 nS
   Drain-Source Capacitance (Cd): 880 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
   Package: TO220

 NCE80H11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE80H11 Datasheet (PDF)

 ..1. Size:361K  1
 nce80h11.pdf

NCE80H11 NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H11NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.1. Size:413K  ncepower
 nce80h15.pdf

NCE80H11 NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

 7.2. Size:337K  ncepower
 nce80h12.pdf

NCE80H11 NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.3. Size:351K  ncepower
 nce80h16.pdf

NCE80H11 NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H16NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)

 7.4. Size:299K  ncepower
 nce80h12d.pdf

NCE80H11 NCE80H11

Pb Free Producthttp://www.ncepower.com NCE80H12DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP037N06L3

 

 
Back to Top