NCE80H11 Specs and Replacement

Type Designator: NCE80H11

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 880 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

NCE80H11 substitution

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NCE80H11 datasheet

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 nce80h11.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H11 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON) ... See More ⇒

 7.1. Size:413K  ncepower
 nce80h15.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON) ... See More ⇒

 7.2. Size:337K  ncepower
 nce80h12.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON) ... See More ⇒

 7.3. Size:351K  ncepower
 nce80h16.pdf pdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H16 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON) ... See More ⇒

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Detailed specifications: WMJ38N60C2, AONR32340C, HCS80R380S, HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, SPP20N60C3, S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.