NCE80H11 datasheet, аналоги, основные параметры
Наименование производителя: NCE80H11 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 105 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 150 ns
Cossⓘ - Выходная емкость: 880 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220
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Аналог (замена) для NCE80H11
- подборⓘ MOSFET транзистора по параметрам
NCE80H11 даташит
nce80h11.pdf
Pb Free Product http //www.ncepower.com NCE80H11 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)
nce80h15.pdf
Pb Free Product http //www.ncepower.com NCE80H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)
nce80h12.pdf
Pb Free Product http //www.ncepower.com NCE80H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)
nce80h16.pdf
Pb Free Product http //www.ncepower.com NCE80H16 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)
Другие IGBT... WMJ38N60C2, AONR32340C, HCS80R380S, HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, IRFP260, S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W
Параметры MOSFET. Взаимосвязь и компромиссы
History: SST65R600S2 | IRF8714PBF | IXFK48N55
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