NCE80H11 datasheet, аналоги, основные параметры

Наименование производителя: NCE80H11  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 105 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 150 ns

Cossⓘ - Выходная емкость: 880 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: TO220

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Аналог (замена) для NCE80H11

- подборⓘ MOSFET транзистора по параметрам

 

NCE80H11 даташит

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nce80h11.pdfpdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H11 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =105A RDS(ON)

 7.1. Size:413K  ncepower
nce80h15.pdfpdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =150A RDS(ON)

 7.2. Size:337K  ncepower
nce80h12.pdfpdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =120A RDS(ON)

 7.3. Size:351K  ncepower
nce80h16.pdfpdf_icon

NCE80H11

Pb Free Product http //www.ncepower.com NCE80H16 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =160A RDS(ON)

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