VS3610GPMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS3610GPMT
   Código: 3610GPM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 31 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 78 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 26 nC
   Tiempo de subida (tr): 59 nS
   Conductancia de drenaje-sustrato (Cd): 820 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0033 Ohm
   Paquete / Cubierta: PDFN5X6

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VS3610GPMT Datasheet (PDF)

..1. Size:827K cn vgsemi
vs3610gpmt.pdf

VS3610GPMT30V/78A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 2.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 3.7 m Low RDS(on) to minimize conduction lossesI D 78 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Ma

8.1. Size:1009K cn vanguard
vs3610ae.pdf

VS3610AE 30V/64A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement mode I D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Pack

8.2. Size:983K cn vgsemi
vs3610ae.pdf

VS3610AE30V/64A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement modeI D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS361

8.3. Size:945K cn vgsemi
vs3610ad.pdf

VS3610AD30V/85A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6 m Enhancement modeI D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3610A

8.4. Size:947K cn vgsemi
vs3610ai.pdf

VS3610AI30V/85A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.2 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6 m Enhancement modeI D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyTO-251SL 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Ma

8.5. Size:1020K cn vgsemi
vs3610ap.pdf

VS3610AP30V/70A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 5.4 m Enhancement modeI D 70 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS36

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