VS3610GPMT
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3610GPMT
Marking Code: 3610GPM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 78
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26
nC
trⓘ - Rise Time: 59
nS
Cossⓘ -
Output Capacitance: 820
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033
Ohm
Package:
PDFN5X6
VS3610GPMT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3610GPMT
Datasheet (PDF)
..1. Size:827K cn vgsemi
vs3610gpmt.pdf 
VS3610GPMT30V/78A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 2.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 3.7 m Low RDS(on) to minimize conduction lossesI D 78 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Ma
8.1. Size:1009K cn vanguard
vs3610ae.pdf
VS3610AE 30V/64A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement mode I D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Pack
8.2. Size:983K cn vgsemi
vs3610ae.pdf
VS3610AE30V/64A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement modeI D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS361
8.3. Size:945K cn vgsemi
vs3610ad.pdf
VS3610AD30V/85A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6 m Enhancement modeI D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3610A
8.4. Size:947K cn vgsemi
vs3610ai.pdf
VS3610AI30V/85A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.2 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6 m Enhancement modeI D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyTO-251SL 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Ma
8.5. Size:1020K cn vgsemi
vs3610ap.pdf
VS3610AP30V/70A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 5.4 m Enhancement modeI D 70 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS36
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