VS3633GE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS3633GE30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 9.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 15 m VitoMOS TechnologyI D(Silicon Limited) 32 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3633GE PDFN3333 3633G

VS3633GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 11 mR DS(on),TYP@ VGS=4.5 V 16 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3633GA DFN2x2x0.75-6L 3633 3000PCS/ReelMaximum ratings, at TA =25C,

VS3638DE-G30V/15A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 12 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 20 m Enhancement modeI D(Silicon Limited) 27 A VitoMOS TechnologyI D(Package Limited) 15 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac

VS3638GE30V/23A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 11 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m VitoMOS TechnologyI D(Silicon Limited) 40 A Fast Switching and High efficiencyI D(Package Limited) 23 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3638GE PDFN3333 3638GE

VS3638GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 mR DS(on),TYP@ VGS=4.5 V 18 m Enhancement mode VitoMOS Technology I D 12 A Low Gate ChargeDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3638GA DFN2x2x0.75-6L 3638 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Ratin