VS3633GE Specs and Replacement

Type Designator: VS3633GE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: PDFN3333

VS3633GE substitution

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VS3633GE datasheet

 ..1. Size:836K  cn vgsemi
 vs3633ge.pdf pdf_icon

VS3633GE

VS3633GE 30V/24A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 15 m VitoMOS Technology I D(Silicon Limited) 32 A Fast Switching and High efficiency I D(Package Limited) 24 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3633GE PDFN3333 3633G... See More ⇒

 7.1. Size:992K  cn vgsemi
 vs3633ga.pdf pdf_icon

VS3633GE

VS3633GA 30V/12A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 11 m R DS(on),TYP@ VGS=4.5 V 16 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses DFN2x2x0.75-6L Part ID Package Type Marking Packing VS3633GA DFN2x2x0.75-6L 3633 3000PCS/Reel Maximum ratings, at TA =25 C, ... See More ⇒

 9.1. Size:1065K  cn vgsemi
 vs3638de-g.pdf pdf_icon

VS3633GE

VS3638DE-G 30V/15A Dual N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 12 m Dual N-Channel R DS(on),TYP@ VGS=4.5V 20 m Enhancement mode I D(Silicon Limited) 27 A VitoMOS Technology I D(Package Limited) 15 A Fast Switching and High efficiency PDFN3333 Dual 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Pac... See More ⇒

 9.2. Size:1664K  cn vgsemi
 vs3638ge.pdf pdf_icon

VS3633GE

VS3638GE 30V/23A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 11 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 20 m VitoMOS Technology I D(Silicon Limited) 40 A Fast Switching and High efficiency I D(Package Limited) 23 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3638GE PDFN3333 3638GE... See More ⇒

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Detailed specifications: VS3625DP2-G, VS3625GEMC, VS3625GPMC, VS3628DB, VS3628GA, VS3628GE, VS3628GP, VS3633GA, IRF3205, VS3638GA, VS3638GE, VS3640AA, VS3640AC, VS3640AD, VS3640AE, VS3640AS, VS3640AT

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