VS4802GPMT Todos los transistores

 

VS4802GPMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS4802GPMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 215 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 88 nS
   Cossⓘ - Capacitancia de salida: 1925 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
   Paquete / Cubierta: PDFN5X6
     - Selección de transistores por parámetros

 

VS4802GPMT Datasheet (PDF)

 ..1. Size:1140K  cn vgsemi
vs4802gpmt.pdf pdf_icon

VS4802GPMT

VS4802GPMT40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 1.1 m Ultra low on-resistanceI D(Silicon Limited) 215 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking

 6.1. Size:975K  cn vgsemi
vs4802gpht.pdf pdf_icon

VS4802GPMT

VS4802GPHT40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.7 m Enhancement modeI D(Silicon Limited) 215 A Ultra low on-resistanceI D(Package Limited) 200 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking Pa

 7.1. Size:1314K  cn vgsemi
vs4802gkm.pdf pdf_icon

VS4802GPMT

VS4802GKM40V/240A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 0.92 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.35 m Ultra low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 240 A VitoMOS TechnologyTOLL 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses

 7.2. Size:996K  cn vgsemi
vs4802gmm.pdf pdf_icon

VS4802GPMT

VS4802GMM40V/135A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.6 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 135 A VitoMOS TechnologyTO-263 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart I

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: UTT36P03 | 2SK1336 | CSD17310Q5A | WSD4066DN | AOLF66610 | VS3618AE | HY2N65D

 

 
Back to Top

 


 
.