VS4802GPMT
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS4802GPMT
Marking Code: 4802GPM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 215
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 153
nC
trⓘ - Rise Time: 88
nS
Cossⓘ -
Output Capacitance: 1925
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001
Ohm
Package:
PDFN5X6
VS4802GPMT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS4802GPMT
Datasheet (PDF)
..1. Size:1140K cn vgsemi
vs4802gpmt.pdf 
VS4802GPMT40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 1.1 m Ultra low on-resistanceI D(Silicon Limited) 215 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking
6.1. Size:975K cn vgsemi
vs4802gpht.pdf
VS4802GPHT40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.7 m Enhancement modeI D(Silicon Limited) 215 A Ultra low on-resistanceI D(Package Limited) 200 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking Pa
7.1. Size:1314K cn vgsemi
vs4802gkm.pdf
VS4802GKM40V/240A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 0.92 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.35 m Ultra low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 240 A VitoMOS TechnologyTOLL 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses
7.2. Size:996K cn vgsemi
vs4802gmm.pdf
VS4802GMM40V/135A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.6 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 135 A VitoMOS TechnologyTO-263 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart I
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