ME1303AT3-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME1303AT3-G Datasheet (PDF)

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ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m@VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180

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ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on

Otros transistores... FTP11N08A , JY09M , ME100N03T , ME100N03T-G , ME120N04T , ME1302AT3 , ME1302AT3-G , ME1303AT3 , 10N60 , ME13N10A , ME13N10A-G , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , ME200N04T , ME200N04T-G .