ME1303AT3-G Specs and Replacement
Type Designator: ME1303AT3-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SOT323
ME1303AT3-G substitution
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ME1303AT3-G datasheet
me1303at3 me1303at3-g.pdf
ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m @VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180... See More ⇒
me1302at3 me1302at3-g.pdf
ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on... See More ⇒
Detailed specifications: FTP11N08A, JY09M, ME100N03T, ME100N03T-G, ME120N04T, ME1302AT3, ME1302AT3-G, ME1303AT3, IRFP260N, ME13N10A, ME13N10A-G, ME15N25, ME15N25F, ME15N25F-G, ME15N25-G, ME200N04T, ME200N04T-G
Keywords - ME1303AT3-G MOSFET specs
ME1303AT3-G cross reference
ME1303AT3-G equivalent finder
ME1303AT3-G pdf lookup
ME1303AT3-G substitution
ME1303AT3-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
