ME20N10-G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME20N10-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME20N10-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 429 nS

Cossⓘ - Capacitancia de salida: 83 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm

Encapsulados: TO252

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ME20N10-G datasheet

..1. Size:1167K matsuki electric
me20n10 me20n10-g.pdf pdf_icon

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

7.1. Size:846K cn vbsemi
me20n10.pdf pdf_icon

ME20N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (

8.1. Size:1097K matsuki electric
me20n15 me20n15-g.pdf pdf_icon

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

8.2. Size:1216K matsuki electric
me20n15f.pdf pdf_icon

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

Otros transistores... ME13N10A, ME13N10A-G, ME15N25, ME15N25F, ME15N25F-G, ME15N25-G, ME200N04T, ME200N04T-G, 8205A, ME20N15F, ME2301A, ME2301A-G, ME2301DC, ME2301DC-G, ME2301DN, ME2301DN-G, ME2301GC

ME20N10-G Todos los transistores