All MOSFET. ME20N10-G Datasheet

 

ME20N10-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME20N10-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.6 nC
   trⓘ - Rise Time: 429 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO252

 ME20N10-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME20N10-G Datasheet (PDF)

 ..1. Size:1167K  matsuki electric
 me20n10 me20n10-g.pdf

ME20N10-G ME20N10-G

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON)78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

 7.1. Size:846K  cn vbsemi
 me20n10.pdf

ME20N10-G ME20N10-G

ME20N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

 8.1. Size:1097K  matsuki electric
 me20n15 me20n15-g.pdf

ME20N10-G ME20N10-G

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

 8.2. Size:1216K  matsuki electric
 me20n15f.pdf

ME20N10-G ME20N10-G

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: JFPC11N50C

 

 
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