ME4972-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME4972-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11.1 nS
Cossⓘ - Capacitancia de salida: 34 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.376 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de ME4972-G MOSFET
ME4972-G Datasheet (PDF)
me4972-g.pdf
ME4972-G Dual N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)376m@VGS=10V The ME4972-G is the N-Channel logic enhancement mode power RDS(ON)360m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to
me4970 me4970g.pdf
ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely
me4970 me4970-g.pdf
ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely
me4970a me4970a-g.pdf
ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=10V power field effect transistors are produced using high cell density, RDS(ON)20m@VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD
Otros transistores... ME4894-G , ME4906-G , ME4920 , ME4920-G , ME4947 , ME4947-G , ME4970A , ME4970A-G , IRFB4110 , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 , ME55N06-G , ME5602D-G , ME60N03S .
History: SIHFR9210
History: SIHFR9210
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTP06N06N | MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50
Popular searches
2sc1451 | c3199 transistor | 2n2712 datasheet | 2sc2525 | tip73 | 2n3392 | 2n2369a | 2sc733