ME4972-G Specs and Replacement
Type Designator: ME4972-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.1 nS
Cossⓘ - Output Capacitance: 34 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.376 Ohm
Package: SOP8
ME4972-G substitution
- MOSFET ⓘ Cross-Reference Search
ME4972-G datasheet
me4970 me4970g.pdf
ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON) 16m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely ... See More ⇒
me4970 me4970-g.pdf
ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON) 16m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely ... See More ⇒
me4970a me4970a-g.pdf
ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON) 14m @VGS=10V power field effect transistors are produced using high cell density, RDS(ON) 20m @VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD... See More ⇒
Detailed specifications: ME4894-G, ME4906-G, ME4920, ME4920-G, ME4947, ME4947-G, ME4970A, ME4970A-G, AON6414A, ME50N02, ME50N02-G, ME50N10, ME50N10-G, ME55N06, ME55N06-G, ME5602D-G, ME60N03S
Keywords - ME4972-G MOSFET specs
ME4972-G cross reference
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