Справочник MOSFET. ME4972-G

 

ME4972-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ME4972-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11.1 ns
   Cossⓘ - Выходная емкость: 34 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.376 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для ME4972-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

ME4972-G Datasheet (PDF)

 ..1. Size:1587K  matsuki electric
 me4972-g.pdf pdf_icon

ME4972-G

ME4972-G Dual N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)376m@VGS=10V The ME4972-G is the N-Channel logic enhancement mode power RDS(ON)360m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

 9.1. Size:1028K  1
 me4970 me4970g.pdf pdf_icon

ME4972-G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

 9.2. Size:1213K  matsuki electric
 me4970 me4970-g.pdf pdf_icon

ME4972-G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

 9.3. Size:1148K  matsuki electric
 me4970a me4970a-g.pdf pdf_icon

ME4972-G

ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=10V power field effect transistors are produced using high cell density, RDS(ON)20m@VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ME4894-G , ME4906-G , ME4920 , ME4920-G , ME4947 , ME4947-G , ME4970A , ME4970A-G , IRFB4110 , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 , ME55N06-G , ME5602D-G , ME60N03S .

History: ZXMN3F318DN8 | ZXMP7A17KTC | BLP065N08G-D | FIR20N50FG | E10P02 | IXTH44P15T | P4506BD

 

 
Back to Top

 


 
.