ME60N04-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME60N04-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO252

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ME60N04-G datasheet

 ..1. Size:1142K  matsuki electric
 me60n04 me60n04-g.pdf pdf_icon

ME60N04-G

ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60N04 is the N-Channel logic enhancement mode power RDS(ON) 12m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 17m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 8.1. Size:649K  matsuki electric
 me60n03a.pdf pdf_icon

ME60N04-G

ME60N03A 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute

 8.2. Size:677K  matsuki electric
 me60n03.pdf pdf_icon

ME60N04-G

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M

 8.3. Size:1102K  matsuki electric
 me60n03 me60n03-g.pdf pdf_icon

ME60N04-G

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g GENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON) 8.5m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 13m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre

MOSTRAR MÁS

Otros transistores... ME50N10, ME50N10-G, ME55N06, ME55N06-G, ME5602D-G, ME60N03S, ME60N03S-G, ME60N04, STP75NF75, ME6600D-G, ME6606D-G, ME6612D-G, ME6874, ME6874-G, ME70N03S, ME70N03S-G, ME70N10T