ME60N04-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME60N04-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 31 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET ME60N04-G
ME60N04-G Datasheet (PDF)
me60n04 me60n04-g.pdf
ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60N04 is the N-Channel logic enhancement mode power RDS(ON)12m@VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON)17m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
me60n03a.pdf
ME60N03A 25V N-Channel Enhancement Mode MOSFETVDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute
me60n03.pdf
ME60N03 30V N-Channel Enhancement Mode MOSFETVDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M
me60n03 me60n03-g.pdf
ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -gGENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON)8.5m@VGS=10Vfield effect transistors are produced using high cell density DMOS RDS(ON)13m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre
me60n03s me60n03s-g.pdf
ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFETVDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe
me60n03as me60n03as-g.pdf
ME60N03AS/ME60N03AS-G25V N-Channel Enhancement Mode MOSFETVDS=25V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 9m DC/DC Converter RDS(ON), Vgs@ 5V,Ids@15A 18m Load Switch LCD Display inverter FEATURES IPC Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC co
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