ME60N04-G MOSFET Datasheet: N-Ch, 40V, 39A. Full specification with pinout and replacement list

ME60N04-G Specs and Replacement

Type Designator: ME60N04-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

ME60N04-G substitution

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ME60N04-G datasheet

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me60n04 me60n04-g.pdf pdf_icon

ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60N04 is the N-Channel logic enhancement mode power RDS(ON) 12m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 17m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(... See More ⇒

8.1. Size:649K matsuki electric
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ME60N03A 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute ... See More ⇒

8.2. Size:677K matsuki electric
me60n03.pdf pdf_icon

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M... See More ⇒

8.3. Size:1102K matsuki electric
me60n03 me60n03-g.pdf pdf_icon

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g GENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON) 8.5m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 13m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre... See More ⇒