ME6606D-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME6606D-G Datasheet (PDF)

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ME6606D-G N-Channel 12V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME6606D-G is the N-Channel logic enhancement mode power RDS(ON)1.25 m@VGS=4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON)1.43 m @VGS=3.8Vtrench technology. This high density process is especially tailored to RDS(ON)1.8 m @VGS=3.1Vminimize on-state resist

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ME6600D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6600D-G is the N-Channel logic enhancement mode power RSS(ON) 5.7 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 6.3 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 8.3 m@VGS=3.1Vminimize on-state re

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ME6602D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6602D-G is the N-Channel logic enhancement mode power RSS(ON) 3.35 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 3.6 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 4.3 m@VGS=3.1Vminimize on-state r

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .