ME6606D-G
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME6606D-G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.39
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 26
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 81.8
nC
trⓘ - Rise Time: 1370
nS
Cossⓘ -
Output Capacitance: 1167
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00125
Ohm
Package: DFN2X3
ME6606D-G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME6606D-G
Datasheet (PDF)
..1. Size:1164K matsuki electric
me6606d-g.pdf 
ME6606D-G N-Channel 12V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME6606D-G is the N-Channel logic enhancement mode power RDS(ON)1.25 m@VGS=4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON)1.43 m @VGS=3.8Vtrench technology. This high density process is especially tailored to RDS(ON)1.8 m @VGS=3.1Vminimize on-state resist
9.1. Size:1036K matsuki electric
me6600d-g.pdf
ME6600D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6600D-G is the N-Channel logic enhancement mode power RSS(ON) 5.7 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 6.3 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 8.3 m@VGS=3.1Vminimize on-state re
9.2. Size:427K matsuki electric
me6602d-g.pdf
ME6602D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6602D-G is the N-Channel logic enhancement mode power RSS(ON) 3.35 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 3.6 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 4.3 m@VGS=3.1Vminimize on-state r
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