ME6606D-G Datasheet and Replacement. Cross Reference Search

ME6606D-G Datasheet (PDF)

..1. Size:1164K matsuki electric
me6606d-g.pdf pdf_icon

ME6606D-G N-Channel 12V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME6606D-G is the N-Channel logic enhancement mode power RDS(ON)1.25 m@VGS=4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON)1.43 m @VGS=3.8Vtrench technology. This high density process is especially tailored to RDS(ON)1.8 m @VGS=3.1Vminimize on-state resist

9.1. Size:1036K matsuki electric
me6600d-g.pdf pdf_icon

ME6600D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6600D-G is the N-Channel logic enhancement mode power RSS(ON) 5.7 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 6.3 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 8.3 m@VGS=3.1Vminimize on-state re

9.2. Size:427K matsuki electric
me6602d-g.pdf pdf_icon

ME6602D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6602D-G is the N-Channel logic enhancement mode power RSS(ON) 3.35 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 3.6 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 4.3 m@VGS=3.1Vminimize on-state r

Datasheet: ME55N06 , ME55N06-G , ME5602D-G , ME60N03S , ME60N03S-G , ME60N04 , ME60N04-G , ME6600D-G , IRF1010E , ME6612D-G , ME6874 , ME6874-G , ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 .