ME6606D-G Specs and Replacement

Type Designator: ME6606D-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1370 nS

Cossⓘ - Output Capacitance: 1167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm

Package: DFN2X3

ME6606D-G substitution

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ME6606D-G datasheet

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ME6606D-G

ME6606D-G N-Channel 12V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6606D-G is the N-Channel logic enhancement mode power RDS(ON) 1.25 m @VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 1.43 m @VGS=3.8V trench technology. This high density process is especially tailored to RDS(ON) 1.8 m @VGS=3.1V minimize on-state resist... See More ⇒

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ME6606D-G

ME6600D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6600D-G is the N-Channel logic enhancement mode power RSS(ON) 5.7 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RSS(ON) 6.3 m @VGS=3.8V trench technology. This high density process is especially tailored to RSS(ON) 8.3 m @VGS=3.1V minimize on-state re... See More ⇒

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ME6606D-G

ME6602D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6602D-G is the N-Channel logic enhancement mode power RSS(ON) 3.35 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RSS(ON) 3.6 m @VGS=3.8V trench technology. This high density process is especially tailored to RSS(ON) 4.3 m @VGS=3.1V minimize on-state r... See More ⇒

Detailed specifications: ME55N06, ME55N06-G, ME5602D-G, ME60N03S, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, IRF9540N, ME6612D-G, ME6874, ME6874-G, ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232

Keywords - ME6606D-G MOSFET specs

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