ME7232S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7232S-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50.8 nS
Cossⓘ - Capacitancia de salida: 187 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de ME7232S-G MOSFET
ME7232S-G Datasheet (PDF)
me7232s-g.pdf

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232s me7232s-g.pdf

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232 me7232-g.pdf

ME7232/ME7232-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)4.5 m@VGS=10VThe ME7232-G is the N-Channel logic enhancement mode power RDS(ON)6.8 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
Otros transistores... ME6874-G , ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 , ME7232-G , ME7232S , RFP50N06 , ME7306-G , ME7345-G , ME7356-G , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 .



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