ME7232S-G Specs and Replacement
Type Designator: ME7232S-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50.8 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DFN3X3
ME7232S-G substitution
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ME7232S-G datasheet
me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5 m @VGS=10V The ME7232S-G is the N-Channel logic enhancement mode power RDS(ON) 7 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒
me7232s me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5 m @VGS=10V The ME7232S-G is the N-Channel logic enhancement mode power RDS(ON) 7 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒
me7232 me7232-g.pdf
ME7232/ME7232-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 4.5 m @VGS=10V The ME7232-G is the N-Channel logic enhancement mode power RDS(ON) 6.8 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒
Detailed specifications: ME6874-G, ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, ME7232-G, ME7232S, AON7410, ME7306-G, ME7345-G, ME7356-G, ME7362, ME7362-G, ME7423S-G, ME7442D-G, ME75N03
Keywords - ME7232S-G MOSFET specs
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