All MOSFET. ME7232S-G Datasheet

 

ME7232S-G Datasheet and Replacement


   Type Designator: ME7232S-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 68.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50.8 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN3X3
 

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ME7232S-G Datasheet (PDF)

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ME7232S-G

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to

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ME7232S-G

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to

 8.1. Size:925K  matsuki electric
 me7232 me7232-g.pdf pdf_icon

ME7232S-G

ME7232/ME7232-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)4.5 m@VGS=10VThe ME7232-G is the N-Channel logic enhancement mode power RDS(ON)6.8 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to

Datasheet: ME6874-G , ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 , ME7232-G , ME7232S , RFP50N06 , ME7306-G , ME7345-G , ME7356-G , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 .

Keywords - ME7232S-G MOSFET datasheet

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