FDMS7650 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS7650
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 149 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
Paquete / Cubierta: POWER56
Búsqueda de reemplazo de MOSFET FDMS7650
FDMS7650 Datasheet (PDF)
fdms7650.pdf
August 2009FDMS7650N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 Aringing of DC/DC converters using either synchronous or Advance
fdms7650.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7658as.pdf
FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma
fdms7656as.pdf
September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest
fdms7658as.pdf
September 2009FDMS7658ASN-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 Apackage technologies have been combined to offer the lowest
fdms7658as.pdf
FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918