FDMS7650 - описание и поиск аналогов

August 2009 FDMS7650 N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 A improve the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 A ringing of DC/DC converters using either synchronous or Advance

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma

September 2009 FDMS7656AS N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 A package technologies have been combined to offer the lowest

September 2009 FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A package technologies have been combined to offer the lowest

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma