All MOSFET. FDMS7650 Datasheet

 

FDMS7650 Datasheet and Replacement


   Type Designator: FDMS7650
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 149 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: POWER56
 

 FDMS7650 substitution

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FDMS7650 Datasheet (PDF)

 ..1. Size:285K  fairchild semi
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FDMS7650

August 2009FDMS7650N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 Aringing of DC/DC converters using either synchronous or Advance

 ..2. Size:386K  onsemi
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FDMS7650

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:474K  1
fdms7658as.pdf pdf_icon

FDMS7650

FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma

 7.2. Size:305K  fairchild semi
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FDMS7650

September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest

Datasheet: FDMS7602S , STM8358S , FDMS7606 , STM8330 , FDMS7608S , STM8324 , FDMS7620S , STM8320 , IRF9640 , STM8319 , FDMS7650DC , STM8309 , FDMS7656AS , STM8306 , FDMS7658AS , STM8300 , FDMS7660 .

History: FDB8870

Keywords - FDMS7650 MOSFET datasheet

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