MEE3712H Todos los transistores

 

MEE3712H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MEE3712H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 572 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO263
 

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MEE3712H Datasheet (PDF)

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MEE3712H

MEE3712H N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712H is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 7.1. Size:1328K  matsuki electric
 mee3712t.pdf pdf_icon

MEE3712H

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 7.2. Size:1295K  matsuki electric
 mee3712f.pdf pdf_icon

MEE3712H

MEE3712F N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712F is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 8.1. Size:1198K  matsuki electric
 mee3710t.pdf pdf_icon

MEE3712H

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON)23m@VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

MOSTRAR MÁS

Otros transistores... ME9435AS-G , ME95N10F , ME95N10F-G , ME96N03-G , MEE2348 , MEE2348-G , MEE3710T , MEE3712F , AON6414A , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G .

History: CEU05P03 | WMB090DNV6LG4 | DMP3013SFV-13 | STD25P03L

 

 
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