MEE3712H Datasheet and Replacement
Type Designator: MEE3712H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 572 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO263
MEE3712H substitution
MEE3712H Datasheet (PDF)
mee3712h.pdf

MEE3712H N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712H is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec
mee3712t.pdf

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec
mee3712f.pdf

MEE3712F N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712F is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec
mee3710t.pdf

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON)23m@VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance
Datasheet: ME9435AS-G , ME95N10F , ME95N10F-G , ME96N03-G , MEE2348 , MEE2348-G , MEE3710T , MEE3712F , IRF3710 , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G .
History: NTMFS6H801NT1G | HY4004B | TTD135N68A | SVSP20NF60TD2 | MTW8N50E | NCEP023N85 | BLF7G22L-250P
Keywords - MEE3712H MOSFET datasheet
MEE3712H cross reference
MEE3712H equivalent finder
MEE3712H lookup
MEE3712H substitution
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History: NTMFS6H801NT1G | HY4004B | TTD135N68A | SVSP20NF60TD2 | MTW8N50E | NCEP023N85 | BLF7G22L-250P



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