MEE2348-G MOSFET. Datasheet pdf. Equivalent
Type Designator: MEE2348-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.5 nC
trⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 119 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT23
MEE2348-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MEE2348-G Datasheet (PDF)
..1. Size:640K matsuki electric
mee2348 mee2348-g.pdf
mee2348 mee2348-g.pdf
MEE2348/MEE2348-G N-Channel 100 V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)130 m@VGS=10V The MEE2348-G is a N-Channel enhancement mode power field effect RDS(ON)165 m@VGS=4.5V transistor, using Force-MOS patented Extended Trench Gate(ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tail
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
