MEE2348-G PDF and Equivalents Search

 

MEE2348-G Specs and Replacement

Type Designator: MEE2348-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.8 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23

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MEE2348-G datasheet

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MEE2348-G

MEE2348/MEE2348-G N-Channel 100 V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 130 m @VGS=10V The MEE2348-G is a N-Channel enhancement mode power field effect RDS(ON) 165 m @VGS=4.5V transistor, using Force-MOS patented Extended Trench Gate(ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tail... See More ⇒

Detailed specifications: ME8205B, ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G, ME96N03-G, MEE2348, IRF640N, MEE3710T, MEE3712F, MEE3712H, MEE3712T, MEE3716F, MEE3716T, MEE3718T, MEE4292-G

Keywords - MEE2348-G MOSFET specs

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