All MOSFET. MEE2348-G Datasheet

 

MEE2348-G Datasheet and Replacement


   Type Designator: MEE2348-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23
 

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MEE2348-G Datasheet (PDF)

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MEE2348-G

MEE2348/MEE2348-G N-Channel 100 V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)130 m@VGS=10V The MEE2348-G is a N-Channel enhancement mode power field effect RDS(ON)165 m@VGS=4.5V transistor, using Force-MOS patented Extended Trench Gate(ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tail

Datasheet: ME8205B , ME8205B-G , ME9435AS , ME9435AS-G , ME95N10F , ME95N10F-G , ME96N03-G , MEE2348 , IRF630 , MEE3710T , MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G .

History: APTC60DDAM70CT1G | AM1561CE

Keywords - MEE2348-G MOSFET datasheet

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