ME96N03-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME96N03-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 107.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 353 nS
Cossⓘ - Output Capacitance: 311 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO252
ME96N03-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME96N03-G Datasheet (PDF)
..1. Size:1097K matsuki electric
me96n03-g.pdf
me96n03-g.pdf
ME96N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.4m@VGS=10V The ME96N03-G is the N-Channel logic enhancement mode power RDS(ON)6.3m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailore
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
