ME96N03-G PDF and Equivalents Search

 

ME96N03-G Specs and Replacement

Type Designator: ME96N03-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 107.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 353 nS

Cossⓘ - Output Capacitance: 311 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO252

ME96N03-G substitution

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ME96N03-G datasheet

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ME96N03-G

ME96N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 3.4m @VGS=10V The ME96N03-G is the N-Channel logic enhancement mode power RDS(ON) 6.3m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailore... See More ⇒

Detailed specifications: ME8117, ME8117-G, ME8205B, ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G, IRLZ44N, MEE2348, MEE2348-G, MEE3710T, MEE3712F, MEE3712H, MEE3712T, MEE3716F, MEE3716T

Keywords - ME96N03-G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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