All MOSFET. ME96N03-G Datasheet

 

ME96N03-G Datasheet and Replacement


   Type Designator: ME96N03-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 107.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 353 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO252
 

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ME96N03-G Datasheet (PDF)

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ME96N03-G

ME96N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.4m@VGS=10V The ME96N03-G is the N-Channel logic enhancement mode power RDS(ON)6.3m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailore

Datasheet: ME8117 , ME8117-G , ME8205B , ME8205B-G , ME9435AS , ME9435AS-G , ME95N10F , ME95N10F-G , IRFB4110 , MEE2348 , MEE2348-G , MEE3710T , MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T .

History: SMG2334N | MTW35N15E | SMG2329P | MTW33N10E | MEE3712F | APT1003RSLL | AFP8823

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