MEE4298-G Todos los transistores

 

MEE4298-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MEE4298-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46.9 nS
   Cossⓘ - Capacitancia de salida: 1130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: SOP8
 

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MEE4298-G Datasheet (PDF)

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 mee4298-g.pdf pdf_icon

MEE4298-G

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)t

 7.1. Size:884K  matsuki electric
 mee4298k-g.pdf pdf_icon

MEE4298-G

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

 7.2. Size:975K  matsuki electric
 mee4298ht.pdf pdf_icon

MEE4298-G

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-res

 7.3. Size:874K  matsuki electric
 mee4298t.pdf pdf_icon

MEE4298-G

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)11.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

MOSTRAR MÁS

Otros transistores... MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 , 8205A , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G .

History: WM10N02M | NCEP40P80D

 

 
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