All MOSFET. MEE4298-G Datasheet

 

MEE4298-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEE4298-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66.8 nC
   trⓘ - Rise Time: 46.9 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP8

 MEE4298-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE4298-G Datasheet (PDF)

 ..1. Size:913K  matsuki electric
 mee4298-g.pdf

MEE4298-G MEE4298-G

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)t

 7.1. Size:884K  matsuki electric
 mee4298k-g.pdf

MEE4298-G MEE4298-G

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

 7.2. Size:975K  matsuki electric
 mee4298ht.pdf

MEE4298-G MEE4298-G

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-res

 7.3. Size:874K  matsuki electric
 mee4298t.pdf

MEE4298-G MEE4298-G

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)11.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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