MEE4298-G MOSFET: N-Ch, 100V, 13A. Full datasheet with pinout, specifications and replacement transistor list

MEE4298-G Datasheet (PDF)

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Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)t

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Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON)8m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)11.5m@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

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Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-res

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Preliminary-MEE4298T N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON)8m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)11.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

Datasheet: MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 , IRFP260 , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G .