MEE4298HT Todos los transistores

 

MEE4298HT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MEE4298HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46.9 nS
   Cossⓘ - Capacitancia de salida: 1130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET MEE4298HT

 

Principales características: MEE4298HT

 ..1. Size:975K  matsuki electric
 mee4298ht.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-res

 7.1. Size:884K  matsuki electric
 mee4298k-g.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

 7.2. Size:913K  matsuki electric
 mee4298-g.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) t

 7.3. Size:874K  matsuki electric
 mee4298t.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 11.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

MOSTRAR MÁS

Otros transistores... MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 , MEE4298-G , 4435 , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G .

 

 
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