MEE4298HT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE4298HT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 86 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46.9 nS

Cossⓘ - Capacitancia de salida: 1130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

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MEE4298HT datasheet

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MEE4298HT

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-res

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 mee4298k-g.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON)

 7.2. Size:913K  matsuki electric
 mee4298-g.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) t

 7.3. Size:874K  matsuki electric
 mee4298t.pdf pdf_icon

MEE4298HT

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 11.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low

MOSTRAR MÁS

Otros transistores... MEE4294K, MEE4294K2, MEE4294K2-G, MEE4294K-G, MEE4294P2-G, MEE4294P-G, MEE4294T2, MEE4298-G, AO3401, MEE4298K-G, MEE4298T, MEE6240T, MEE7292-G, MEE72962-G, MEE7296-G, MEE7298-G, MEE7630-G