MEE4298HT Datasheet. Specs and Replacement

Type Designator: MEE4298HT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46.9 nS

Cossⓘ - Output Capacitance: 1130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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MEE4298HT datasheet

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MEE4298HT

Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-res... See More ⇒

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MEE4298HT

Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) ... See More ⇒

 7.2. Size:913K  matsuki electric
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MEE4298HT

Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) t... See More ⇒

 7.3. Size:874K  matsuki electric
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MEE4298HT

Preliminary-MEE4298T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 11.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low ... See More ⇒

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Detailed specifications: MEE4294K, MEE4294K2, MEE4294K2-G, MEE4294K-G, MEE4294P2-G, MEE4294P-G, MEE4294T2, MEE4298-G, 4435, MEE4298K-G, MEE4298T, MEE6240T, MEE7292-G, MEE72962-G, MEE7296-G, MEE7298-G, MEE7630-G

Keywords - MEE4298HT MOSFET specs

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