MEE4298HT MOSFET PDF: N-Ch, 100V, 86A. Full specification with pinout and replacement list

MEE4298HT PDF Specs and Replacement

   Type Designator: MEE4298HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 46.9 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220

MEE4298HT substitution

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MEE4298HT PDF Specs

..1. Size:975K matsuki electric
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Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-res... See More ⇒

7.1. Size:884K matsuki electric
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Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) ... See More ⇒

7.2. Size:913K matsuki electric
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Preliminary-MEE4298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) t... See More ⇒

7.3. Size:874K matsuki electric
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Preliminary-MEE4298T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 11.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low ... See More ⇒

Detailed specifications: MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 , MEE4298-G , 4435 , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G .