MEE7298-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MEE7298-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 91 nS
Cossⓘ - Capacitancia de salida: 1084 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
Encapsulados: POWERDFN5X6
Búsqueda de reemplazo de MEE7298-G MOSFET
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MEE7298-G datasheet
mee7298-g.pdf
Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m (typ.)@VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m (typ.)@VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low
mee7296-g.pdf
MEE7296-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)
mee72962-g.pdf
MEE72962-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O
mee7292-g.pdf
MEE7292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on
Otros transistores... MEE4298-G , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , 5N65 , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 .
History: APT1001RBVFR | UPA1724
History: APT1001RBVFR | UPA1724
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