All MOSFET. MEE7298-G Datasheet

 

MEE7298-G MOSFET. Datasheet pdf. Equivalent

Type Designator: MEE7298-G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 68 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 67 nC

Rise Time (tr): 91 nS

Drain-Source Capacitance (Cd): 1084 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm

Package: POWERDFN5X6

MEE7298-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE7298-G Datasheet (PDF)

 ..1. Size:885K  matsuki electric
 mee7298-g.pdf

MEE7298-G MEE7298-G

Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m(typ.)@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m(typ.)@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low

 8.1. Size:896K  matsuki electric
 mee7296-g.pdf

MEE7298-G MEE7298-G

MEE7296-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 8.2. Size:905K  matsuki electric
 mee7292-g.pdf

MEE7298-G MEE7298-G

MEE7292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 8.3. Size:874K  matsuki electric
 mee72962-g.pdf

MEE7298-G MEE7298-G

MEE72962-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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