All MOSFET. MEE7298-G Datasheet

 

MEE7298-G Datasheet and Replacement


   Type Designator: MEE7298-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 67 nC
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 1084 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: POWERDFN5X6

 MEE7298-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE7298-G Datasheet (PDF)

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MEE7298-G

Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m(typ.)@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m(typ.)@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low

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MEE7298-G

MEE7296-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 8.2. Size:874K  matsuki electric
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MEE7298-G

MEE72962-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

 8.3. Size:905K  matsuki electric
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MEE7298-G

MEE7292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

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Datasheet: MEE4298-G , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , 5N65 , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 .

Keywords - MEE7298-G MOSFET datasheet

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