MEE7298-G Datasheet. Specs and Replacement
Type Designator: MEE7298-G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 1084 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: POWERDFN5X6
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MEE7298-G substitution
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MEE7298-G datasheet
mee7298-g.pdf
Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m (typ.)@VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m (typ.)@VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low... See More ⇒
mee7296-g.pdf
MEE7296-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒
mee72962-g.pdf
MEE72962-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O... See More ⇒
mee7292-g.pdf
MEE7292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on... See More ⇒
Detailed specifications: MEE4298-G, MEE4298HT, MEE4298K-G, MEE4298T, MEE6240T, MEE7292-G, MEE72962-G, MEE7296-G, 5N65, MEE7630-G, MEE7636-G, MEE7816AS-G, MEE7816S-G, 2SK815, MDD2601, NCE1579C, SMP730
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