MEE7298-G - аналоги, параметры транзистора - Справочник транзисторов

MEE7298-G даташит

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Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m (typ.)@VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m (typ.)@VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low

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MEE7296-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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MEE72962-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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MEE7292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on

Другие MOSFET... MEE4298-G , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , 5N65 , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 .