MEE7298-G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MEE7298-G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 91 ns
Cossⓘ - Выходная емкость: 1084 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
Тип корпуса: POWERDFN5X6
MEE7298-G Datasheet (PDF)
mee7298-g.pdf

Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m(typ.)@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m(typ.)@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low
mee7296-g.pdf

MEE7296-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)
mee72962-g.pdf

MEE72962-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O
mee7292-g.pdf

MEE7292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on
Другие MOSFET... MEE4298-G , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , MEE7292-G , MEE72962-G , MEE7296-G , 4435 , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 .



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