2SK815 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK815
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 630 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 2SK815 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK815 datasheet
9.8. Size:289K inchange semiconductor
2sk810.pdf 
isc N-Channel MOSFET Transistor 2SK810 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.9. Size:279K inchange semiconductor
2sk811.pdf
isc N-Channel MOSFET Transistor 2SK811 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.10. Size:203K inchange semiconductor
2sk818a.pdf
isc N-Channel MOSFET Transistor 2SK818A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.11. Size:279K inchange semiconductor
2sk817.pdf
isc N-Channel MOSFET Transistor 2SK817 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.12. Size:203K inchange semiconductor
2sk818.pdf
isc N-Channel MOSFET Transistor 2SK818 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
Otros transistores... MEE7292-G
, MEE72962-G
, MEE7296-G
, MEE7298-G
, MEE7630-G
, MEE7636-G
, MEE7816AS-G
, MEE7816S-G
, CS150N03A8
, MDD2601
, NCE1579C
, SMP730
, HCA60R040
, MS5N100
, MS5N100S
, MS5N100FT
, MS5N100FE
.
