2SK815 Todos los transistores

 

2SK815 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK815
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 35 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 21 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 1 V
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 630 pF
   Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET 2SK815

 

2SK815 Datasheet (PDF)

 ..1. Size:355K  1
 2sk815.pdf

2SK815 2SK815

 9.1. Size:354K  1
 2sk810.pdf

2SK815 2SK815

 9.2. Size:507K  1
 2sk814.pdf

2SK815

 9.3. Size:363K  1
 2sk811.pdf

2SK815 2SK815

 9.4. Size:240K  nec
 2sk819.pdf

2SK815 2SK815

2SK819 PCB24

 9.5. Size:174K  nec
 2sk812.pdf

2SK815 2SK815

 9.6. Size:176K  nec
 2sk817.pdf

2SK815 2SK815

 9.7. Size:146K  panasonic
 2sk818-a.pdf

2SK815 2SK815

 9.8. Size:289K  inchange semiconductor
 2sk810.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.9. Size:279K  inchange semiconductor
 2sk811.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.10. Size:203K  inchange semiconductor
 2sk818a.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.11. Size:279K  inchange semiconductor
 2sk817.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.12. Size:203K  inchange semiconductor
 2sk818.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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