All MOSFET. 2SK815 Datasheet

 

2SK815 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK815
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO220F

 2SK815 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK815 Datasheet (PDF)

 ..1. Size:355K  1
 2sk815.pdf

2SK815 2SK815

 9.1. Size:354K  1
 2sk810.pdf

2SK815 2SK815

 9.2. Size:507K  1
 2sk814.pdf

2SK815

 9.3. Size:363K  1
 2sk811.pdf

2SK815 2SK815

 9.4. Size:240K  nec
 2sk819.pdf

2SK815 2SK815

2SK819 PCB24

 9.5. Size:174K  nec
 2sk812.pdf

2SK815 2SK815

 9.6. Size:176K  nec
 2sk817.pdf

2SK815 2SK815

 9.7. Size:146K  panasonic
 2sk818-a.pdf

2SK815 2SK815

 9.8. Size:289K  inchange semiconductor
 2sk810.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.9. Size:279K  inchange semiconductor
 2sk811.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.10. Size:203K  inchange semiconductor
 2sk818a.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.11. Size:279K  inchange semiconductor
 2sk817.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.12. Size:203K  inchange semiconductor
 2sk818.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK1386-01 | FRK260H

 

 
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