2SK815 Datasheet and Replacement
Type Designator: 2SK815
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 630
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
TO220F
- MOSFET Cross-Reference Search
2SK815 Datasheet (PDF)
9.8. Size:289K inchange semiconductor
2sk810.pdf 
isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.9. Size:279K inchange semiconductor
2sk811.pdf
isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.10. Size:203K inchange semiconductor
2sk818a.pdf
isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.11. Size:279K inchange semiconductor
2sk817.pdf
isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.12. Size:203K inchange semiconductor
2sk818.pdf
isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Datasheet: WPB4002
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, FDMS8672S
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History: IPD105N04LG
| FTK9926
| IXTC240N055T
| FRM9230R
| IXFH110N10P
| RSE002P03TL
| 2SK2889
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