All MOSFET. 2SK815 Datasheet

 

2SK815 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK815

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 1 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 630 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO220F

2SK815 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK815 Datasheet (PDF)

 ..1. Size:355K  1
 2sk815.pdf

2SK815 2SK815

 9.1. Size:354K  1
 2sk810.pdf

2SK815 2SK815

 9.2. Size:507K  1
 2sk814.pdf

2SK815

 9.3. Size:363K  1
 2sk811.pdf

2SK815 2SK815

 9.4. Size:176K  nec
 2sk817.pdf

2SK815 2SK815

 9.5. Size:240K  nec
 2sk819.pdf

2SK815 2SK815

2SK819 PCB24

 9.6. Size:174K  nec
 2sk812.pdf

2SK815 2SK815

 9.7. Size:146K  panasonic
 2sk818-a.pdf

2SK815 2SK815

 9.8. Size:203K  inchange semiconductor
 2sk818.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.9. Size:279K  inchange semiconductor
 2sk817.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.10. Size:289K  inchange semiconductor
 2sk810.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.11. Size:203K  inchange semiconductor
 2sk818a.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.12. Size:279K  inchange semiconductor
 2sk811.pdf

2SK815 2SK815

isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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