2SK815 - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2SK815
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 35
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 21
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 630
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.085
Ohm
Тип корпуса:
TO220F
Аналог (замена) для 2SK815
2SK815 Datasheet (PDF)
9.8. Size:289K inchange semiconductor
2sk810.pdf 
isc N-Channel MOSFET Transistor 2SK810 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.9. Size:279K inchange semiconductor
2sk811.pdf 
isc N-Channel MOSFET Transistor 2SK811 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.10. Size:203K inchange semiconductor
2sk818a.pdf 
isc N-Channel MOSFET Transistor 2SK818A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.11. Size:279K inchange semiconductor
2sk817.pdf 
isc N-Channel MOSFET Transistor 2SK817 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.12. Size:203K inchange semiconductor
2sk818.pdf 
isc N-Channel MOSFET Transistor 2SK818 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
Другие MOSFET... MEE7292-G
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.
