Справочник MOSFET. 2SK815

 

2SK815 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK815
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 35 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Минимальное напряжение отсечки |Vgs(off)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 21 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 630 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.085 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK815

 

 

2SK815 Datasheet (PDF)

 ..1. Size:355K  1
2sk815.pdf

2SK815
2SK815

 9.1. Size:354K  1
2sk810.pdf

2SK815
2SK815

 9.2. Size:507K  1
2sk814.pdf

2SK815

 9.3. Size:363K  1
2sk811.pdf

2SK815
2SK815

 9.4. Size:176K  nec
2sk817.pdf

2SK815
2SK815

 9.5. Size:240K  nec
2sk819.pdf

2SK815
2SK815

2SK819 PCB24

 9.6. Size:174K  nec
2sk812.pdf

2SK815
2SK815

 9.7. Size:146K  panasonic
2sk818-a.pdf

2SK815
2SK815

 9.8. Size:203K  inchange semiconductor
2sk818.pdf

2SK815
2SK815

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.9. Size:279K  inchange semiconductor
2sk817.pdf

2SK815
2SK815

isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.10. Size:289K  inchange semiconductor
2sk810.pdf

2SK815
2SK815

isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.11. Size:203K  inchange semiconductor
2sk818a.pdf

2SK815
2SK815

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.12. Size:279K  inchange semiconductor
2sk811.pdf

2SK815
2SK815

isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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