2SK815
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK815
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 35
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 21
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 630
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.085
Ohm
Тип корпуса:
TO220F
Аналог (замена) для 2SK815
-
подбор ⓘ MOSFET транзистора по параметрам
2SK815
Datasheet (PDF)
9.8. Size:289K inchange semiconductor
2sk810.pdf 

isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.9. Size:279K inchange semiconductor
2sk811.pdf 

isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.10. Size:203K inchange semiconductor
2sk818a.pdf 

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.11. Size:279K inchange semiconductor
2sk817.pdf 

isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.12. Size:203K inchange semiconductor
2sk818.pdf 

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
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