HCD60R490 Todos los transistores

 

HCD60R490 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCD60R490
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.49 Ohm
   Paquete / Cubierta: DPAK
 

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HCD60R490 Datasheet (PDF)

 ..1. Size:437K  semihow
 hcd60r490.pdf pdf_icon

HCD60R490

April 2020HCD60R49060V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 8 A Excellent stability and uniformityRDS(on), max 0.49 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.1. Size:368K  semihow
 hcd60r900.pdf pdf_icon

HCD60R490

June 2019HCD60R900600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.0 A Excellent stability and uniformityRDS(on), max 0.9 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

 8.2. Size:436K  semihow
 hcd60r750.pdf pdf_icon

HCD60R490

July 2020HCD60R750600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.8 A Excellent stability and uniformityRDS(on), max 0.75 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

 8.3. Size:418K  semihow
 hcd60r260.pdf pdf_icon

HCD60R490

Sep 2020HCD60R260600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

MOSTRAR MÁS

Otros transistores... SJMN600R70F , HCA60R290 , HCA65R165 , HCA70R180 , HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , 2N60 , HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 .

History: SMG2301 | G12P03D3 | IPP032N06N3G

 

 
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