All MOSFET. HCD60R490 Datasheet

 

HCD60R490 Datasheet and Replacement


   Type Designator: HCD60R490
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: DPAK
 

 HCD60R490 substitution

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HCD60R490 Datasheet (PDF)

 ..1. Size:437K  semihow
 hcd60r490.pdf pdf_icon

HCD60R490

April 2020HCD60R49060V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 8 A Excellent stability and uniformityRDS(on), max 0.49 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.1. Size:368K  semihow
 hcd60r900.pdf pdf_icon

HCD60R490

June 2019HCD60R900600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.0 A Excellent stability and uniformityRDS(on), max 0.9 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

 8.2. Size:436K  semihow
 hcd60r750.pdf pdf_icon

HCD60R490

July 2020HCD60R750600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.8 A Excellent stability and uniformityRDS(on), max 0.75 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

 8.3. Size:418K  semihow
 hcd60r260.pdf pdf_icon

HCD60R490

Sep 2020HCD60R260600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

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Datasheet: SJMN600R70F , HCA60R290 , HCA65R165 , HCA70R180 , HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , 2N60 , HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 .

History: ISZ019N03L5S | IRLML9303

Keywords - HCD60R490 MOSFET datasheet

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 HCD60R490 equivalent finder
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